Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena
- Jaraiz, M.
- Gilmer, G.H.
- Poate, J.M.
- De La Rubia, T.D.
Revue:
Applied Physics Letters
ISSN: 0003-6951
Année de publication: 1995
Pages: 409
Type: Article