Growth of epitaxial layers of in doping GaAs by the vapour-phase epitaxial Trichloride method using a Gallium-Indium alloyed source

  1. Coronado, M.L.
  2. Abril, E.J.
  3. Aguilar, M.
Aldizkaria:
Japanese Journal of Applied Physics

ISSN: 1347-4065,  0021-4922

Argitalpen urtea: 1987

Alea: 26

Zenbakia: 3 A

Orrialdeak: L193-L195

Mota: Artikulua

DOI: 10.1143/JJAP.26.L193 GOOGLE SCHOLAR
Datuen iturria: Scopus