Growth of epitaxial layers of in doping GaAs by the vapour-phase epitaxial Trichloride method using a Gallium-Indium alloyed source

  1. Coronado, M.L.
  2. Abril, E.J.
  3. Aguilar, M.
Revue:
Japanese Journal of Applied Physics

ISSN: 1347-4065,  0021-4922

Année de publication: 1987

Volumen: 26

Número: 3 A

Pages: L193-L195

Type: Article

DOI: 10.1143/JJAP.26.L193 GOOGLE SCHOLAR
La source de données: Scopus