Indium isoelectronic doping influence on etch pit density in gaas layers grown by vapour phase epitaxy

  1. Coronado, M.L.
  2. Abril, E.J.
  3. Aguilar, M.
Revue:
Japanese Journal of Applied Physics

ISSN: 1347-4065,  0021-4922

Année de publication: 1986

Volumen: 25

Número: 11 A

Pages: L899-L901

Type: Article

DOI: 10.1143/JJAP.25.L899 GOOGLE SCHOLAR
La source de données: Scopus