Damage, defects and diffusion from ultra-low energy (0-5 keV) ion implantation of silicon

  1. Agarwal, A.
  2. Gossmann, H.-J.
  3. Eaglesham, D.J.
  4. Pelaz, L.
  5. Herner, S.B.
  6. Jacobson, D.C.
  7. Haynes, T.E.
  8. Simonton, R.
Aldizkaria:
Materials Science in Semiconductor Processing

ISSN: 1369-8001

Argitalpen urtea: 1998

Alea: 1

Zenbakia: 1

Orrialdeak: 17-25

Mota: Artikulua

DOI: 10.1016/S1369-8001(98)00008-0 GOOGLE SCHOLAR
Datuen iturria: Scopus