LUIS
QUINTANILLA SIERRA
PROFESORES TITULARES DE UNIVERSIDAD
MARÍA HELENA
CASTAN LANASPA
CATEDRATICOS DE UNIVERSIDAD
MARÍA HELENA CASTAN LANASPA-rekin lankidetzan egindako argitalpenak (11)
1999
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Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication
Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 373-377
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Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions
Journal of Applied Physics, Vol. 86, Núm. 9, pp. 4855-4860
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Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions
Journal of Applied Physics, Vol. 85, Núm. 11, pp. 7978-7980
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Electrical characterization of deep levels existing in fully implanted and rapid thermal annealed p+n InP junctions
Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 413-418
1998
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Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted p+n InP junctions
Semiconductor Science and Technology, Vol. 13, Núm. 4, pp. 389-393
1997
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Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP
Journal of Applied Physics, Vol. 81, Núm. 7, pp. 3143-3150
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Detailed electrical characterization of DX centers in Se-doped AlxGa1-xAs
Journal of Applied Physics, Vol. 82, Núm. 9, pp. 4338-4345
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Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures
Applied Physics Letters, Vol. 71, Núm. 6, pp. 826-828
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Thermal emission processes of DX centres in AlxGa1-xAs:Si
Solid-State Electronics, Vol. 41, Núm. 1, pp. 103-109
1996
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Determination of three-dimensional deep level defect distribution by capacitance-voltage transient technique (CVTT)
DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1995
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Dopant level freeze-out and nonideal effects in 6H-SiC epilayer junctions
Journal of Applied Physics, Vol. 79, Núm. 1, pp. 310-315