MARÍA HELENA CASTAN LANASPA-rekin lankidetzan egindako argitalpenak (4)

1999

  1. Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions

    Journal of Applied Physics, Vol. 86, Núm. 9, pp. 4855-4860

  2. Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions

    Journal of Applied Physics, Vol. 85, Núm. 11, pp. 7978-7980

1997

  1. Thermal emission processes of DX centres in AlxGa1-xAs:Si

    Solid-State Electronics, Vol. 41, Núm. 1, pp. 103-109

1994

  1. Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique

    Semiconductor Science and Technology, Vol. 9, Núm. 9, pp. 1637-1648