Publicaciones en las que colabora con JUAN JOSE BARBOLLA SANCHO (15)

2005

  1. Jitter effect comparison on continuous-time sigma-delta modulators with different feedback signal shapes

    Proceedings of SPIE - The International Society for Optical Engineering

  2. Noise simulation of continuous-time ΣΔ modulators

    AIP Conference Proceedings

  3. Nonlinearity correction for multibit ΔΣ DACs

    IEEE Transactions on Circuits and Systems I: Regular Papers, Vol. 52, Núm. 6, pp. 1033-1041

2003

  1. A switched Opamp-based bandpass filter: Design and implementation in a 0.35 μm CMOS technology

    Analog Integrated Circuits and Signal Processing, Vol. 34, Núm. 3, pp. 201-209

  2. The role of the bond defect on silicon amorphization: A molecular dynamics study

    Computational Materials Science

2002

  1. Design of a switched opamp-based bandpass filter in a 0.35 μm CMOS technology

    Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems

2001

  1. Design of a CMOS fully differential switched-opamp for SC circuits at very low power supply voltages

    Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems

1997

  1. Molecular dynamics simulations of ion bombardment processes

    Materials Science and Technology, Vol. 13, Núm. 11, pp. 893-896

1996

  1. Avalanche breakdown of high-voltage p-n junctions of SiC

    Microelectronics Journal, Vol. 27, Núm. 1, pp. 43-51

1994

  1. On the forward conduction mechanisms in SiC P-N junctions

    Materials Research Society Symposium - Proceedings

1993

  1. Electrical characterization of MOS structures fabricated on SF6 and SF6 + C2CIF5 reactive ion etched silicon

    Nuclear Inst. and Methods in Physics Research, B, Vol. 80-81, Núm. PART 2, pp. 1362-1366

  2. In-Diffusion and Annealing Kinetics of Palladium in Silicon

    Journal of the Electrochemical Society, Vol. 140, Núm. 3, pp. 868-870

1991

  1. Optical capture cross sections of palladium in silicon

    Journal of Applied Physics, Vol. 69, Núm. 1, pp. 298-301

1987

  1. Optical admittance spectroscopy: A new method for deep level characterization

    Journal of Applied Physics, Vol. 61, Núm. 7, pp. 2541-2545

1986

  1. Electron thermal emission rates of nickel centers in silicon

    Solid State Electronics, Vol. 29, Núm. 9, pp. 883-884