AT and T Bell Laboratories-ko ikertzaileekin lankidetzan egindako argitalpenak (5)

2001

  1. Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

1997

  1. Molecular dynamics simulations of ion bombardment processes

    Materials Science and Technology, Vol. 13, Núm. 11, pp. 893-896

1996

  1. Ion beam induced recrystallization of amorphous silicon: A molecular dynamics study

    Journal of Applied Physics, Vol. 80, Núm. 11, pp. 6160-6169

  2. Ion-beam processing of silicon at keV energies: A molecular-dynamics study

    Physical Review B - Condensed Matter and Materials Physics, Vol. 54, Núm. 23, pp. 16683-16695

  3. Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 112, Núm. 1-4, pp. 156-159