LUIS ALBERTO
MARQUES CUESTA
CATEDRATICOS DE UNIVERSIDAD
AT and T Bell Laboratories
Newark, EE. UU.AT and T Bell Laboratories-ko ikertzaileekin lankidetzan egindako argitalpenak (5)
2001
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Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
1997
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Molecular dynamics simulations of ion bombardment processes
Materials Science and Technology, Vol. 13, Núm. 11, pp. 893-896
1996
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Ion beam induced recrystallization of amorphous silicon: A molecular dynamics study
Journal of Applied Physics, Vol. 80, Núm. 11, pp. 6160-6169
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Ion-beam processing of silicon at keV energies: A molecular-dynamics study
Physical Review B - Condensed Matter and Materials Physics, Vol. 54, Núm. 23, pp. 16683-16695
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Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 112, Núm. 1-4, pp. 156-159