Publications in collaboration with researchers from Stanford University (6)


  1. Role of silicon interstitials in boron cluster dissolution

    Applied Physics Letters, Vol. 86, Núm. 3, pp. 1-3


  1. The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology


  1. Atomistic modeling of B activation and deactivation for ultra-shallow junction formation

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  2. Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles

    Applied Physics Letters, Vol. 83, Núm. 20, pp. 4166-4168

  3. Dopant redistribution effects in preamorphized silicon during low temperature annealing

    Technical Digest - International Electron Devices Meeting


  1. A physics based approach to ultra-shallow p+-junction formation at the 32 nm node

    Technical Digest - International Electron Devices Meeting