Publicaciones en las que colabora con Óscar González Ossorio (22)

2023

  1. Effect of Temperature on the Multilevel Properties and Set and Reset Transitions in HfO2-Based Resistive Switching Devices

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  2. Praseodymium Content Influence on the Resistive Switching Effect of HfO2-Based RRAM Devices

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

2021

  1. Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

    Solid-State Electronics, Vol. 186

  2. Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

    Solid-State Electronics, Vol. 183

  3. Influences of the temperature on the electrical properties of HfO2-based resistive switching devices

    Electronics (Switzerland), Vol. 10, Núm. 22

  4. Performance Assessment of Amorphous HfO2-Based RRAM Devices for Neuromorphic Applications

    ECS Journal of Solid State Science and Technology, Vol. 10, Núm. 8

  5. Performance assessment of amorphous HfO2-based RRAM devices for neuromorphic applications

    ECS Transactions

  6. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

  7. Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge

    Solid-State Electronics, Vol. 183

  8. Thermoelectrical characterization of piezoelectric diaphragms: Towards a better understanding of ferroelectrics for future memory applications

    ECS Transactions

2020

  1. Current Pulses to Control the Conductance in RRAM Devices

    IEEE Journal of the Electron Devices Society, Vol. 8, pp. 291-296

  2. Current and Voltage Control of Intermediate States in Bipolar Rram Devices for Neuristor Applications

    ECS Transactions

  3. Double Swing Quiescent-Current: An Experimental Detection Method of Ferroelectricity in Very Leaky Dielectric Films

    ECS Transactions

  4. Programming pulse width assessment for reliable and low-energy endurance performance in al:Hfo2-based rram arrays

    Electronics (Switzerland), Vol. 9, Núm. 5

  5. Using current pulses to control the intermediate conductance states in hafnium oxide-based RRAM devices

    LAEDC 2020 - Latin American Electron Devices Conference

2019

  1. Controlling the intermediate conductance states in RRAM devices for synaptic applications

    Microelectronic Engineering, Vol. 215

  2. Dynamics of set and reset processes on resistive switching memories

    Microelectronic Engineering, Vol. 216

  3. Effective Reduction of the Programing Pulse Width in Al: HfO2-based RRAM Arrays

    2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019

2018

  1. Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices

    2017 32nd Conference on Design of Circuits and Integrated Systems, DCIS 2017 - Proceedings

  2. Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

    Journal of Applied Physics, Vol. 124, Núm. 15