JUAN JOSE
BARBOLLA SANCHO
Investigador en el període 1983-2005
JOSE
VICENTE ANTON
Investigador en el període 1984-2023
Publicacions en què col·labora amb JOSE VICENTE ANTON (15)
2005
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Jitter effect comparison on continuous-time sigma-delta modulators with different feedback signal shapes
Proceedings of SPIE - The International Society for Optical Engineering
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Noise simulation of continuous-time ΣΔ modulators
AIP Conference Proceedings
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Nonlinearity correction for multibit ΔΣ DACs
IEEE Transactions on Circuits and Systems I: Regular Papers, Vol. 52, Núm. 6, pp. 1033-1041
2003
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A switched Opamp-based bandpass filter: Design and implementation in a 0.35 μm CMOS technology
Analog Integrated Circuits and Signal Processing, Vol. 34, Núm. 3, pp. 201-209
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The role of the bond defect on silicon amorphization: A molecular dynamics study
Computational Materials Science
2002
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Design of a switched opamp-based bandpass filter in a 0.35 μm CMOS technology
Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
2001
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Design of a CMOS fully differential switched-opamp for SC circuits at very low power supply voltages
Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
1997
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Molecular dynamics simulations of ion bombardment processes
Materials Science and Technology, Vol. 13, Núm. 11, pp. 893-896
1996
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Avalanche breakdown of high-voltage p-n junctions of SiC
Microelectronics Journal, Vol. 27, Núm. 1, pp. 43-51
1994
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On the forward conduction mechanisms in SiC P-N junctions
Materials Research Society Symposium - Proceedings
1993
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Electrical characterization of MOS structures fabricated on SF6 and SF6 + C2CIF5 reactive ion etched silicon
Nuclear Inst. and Methods in Physics Research, B, Vol. 80-81, Núm. PART 2, pp. 1362-1366
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In-Diffusion and Annealing Kinetics of Palladium in Silicon
Journal of the Electrochemical Society, Vol. 140, Núm. 3, pp. 868-870
1991
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Optical capture cross sections of palladium in silicon
Journal of Applied Physics, Vol. 69, Núm. 1, pp. 298-301
1987
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Optical admittance spectroscopy: A new method for deep level characterization
Journal of Applied Physics, Vol. 61, Núm. 7, pp. 2541-2545
1986
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Electron thermal emission rates of nickel centers in silicon
Solid State Electronics, Vol. 29, Núm. 9, pp. 883-884