Publicacións nas que colabora con Enrique San Andres Serrano (7)

2005

  1. Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon

    2005 Spanish Conference on Electron Devices, Proceedings

  2. On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO 2/Si fabricated by ECR-CVD

    Microelectronics Reliability

2004

  1. Conductance Transient Comparative Analysis of Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiNx, SiC 2/SiNx and SiOxNy Dielectric Films on Silicon Substrates

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, Núm. 1, pp. 66-70

2003

  1. A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide

    Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 375-378

  2. Conductance transient comparative analysis of ECR-PECVD deposited SiN x, SiO2/SiNx and SiOxNy dielectric films on silicon substrates

    Materials Research Society Symposium - Proceedings

  3. Conductance transient comparative analysis of ECR-PECVD deposited SiN<sub>x</sub>, SiO<sub>2</sub>/SiN<sub>x</sub> and SiO<sub>x</sub>N<sub>y</sub> dielectric films on silicon substrates

    MRS Proceedings, Vol. 786

  4. Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films

    Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 287-290