Publicaciones en las que colabora con Hans Joachim L. Gossmann (7)

2005

  1. Amorphous layer depth dependence on implant parameters during Si self-implantation

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

2002

  1. Carbon in silicon: Modeling of diffusion and clustering mechanisms

    Journal of Applied Physics, Vol. 92, Núm. 3, pp. 1582-1587

1999

  1. Activation and deactivation of implanted B in Si

    Applied Physics Letters, Vol. 75, Núm. 5, pp. 662-664

  2. B cluster formation and dissolution in Si: A scenario based on atomistic modeling

    Applied Physics Letters, Vol. 74, Núm. 24, pp. 3657-3659

  3. Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion

    Applied Physics Letters, Vol. 74, Núm. 14, pp. 2017-2019

1998

  1. Atomistic modeling of point and extended defects in crystalline materials

    Materials Research Society Symposium - Proceedings

  2. Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the "+1" model

    Applied Physics Letters, Vol. 73, Núm. 10, pp. 1421-1423