JUAN JOSE
BARBOLLA SANCHO
Investigador en el periodo 1983-2005
![Foto de Hans Joachim L.](/img/nophoto.png)
Hans Joachim L.
Gossmann
Publicaciones en las que colabora con Hans Joachim L. Gossmann (7)
2005
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Amorphous layer depth dependence on implant parameters during Si self-implantation
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
2002
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Carbon in silicon: Modeling of diffusion and clustering mechanisms
Journal of Applied Physics, Vol. 92, Núm. 3, pp. 1582-1587
1999
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Activation and deactivation of implanted B in Si
Applied Physics Letters, Vol. 75, Núm. 5, pp. 662-664
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B cluster formation and dissolution in Si: A scenario based on atomistic modeling
Applied Physics Letters, Vol. 74, Núm. 24, pp. 3657-3659
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Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion
Applied Physics Letters, Vol. 74, Núm. 14, pp. 2017-2019
1998
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Atomistic modeling of point and extended defects in crystalline materials
Materials Research Society Symposium - Proceedings
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Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the "+1" model
Applied Physics Letters, Vol. 73, Núm. 10, pp. 1421-1423