Publicacions en què col·labora amb MARIA LOURDES PELAZ MONTES (12)

2005

  1. Boron redistribution in pre-amorphized Si during thermal annealing

    2005 Spanish Conference on Electron Devices, Proceedings

  2. Damage buildup model with dose rate and temperature dependence

    2005 Spanish Conference on Electron Devices, Proceedings

  3. Study of the amorphous phase of silicon using molecular dynamics simulation techniques

    2005 Spanish Conference on Electron Devices, Proceedings

2003

  1. Monte Carlo modeling of amorphization resulting from ion implantation in Si

    Computational Materials Science

2000

  1. Kinetic Monte Carlo simulations: An accurate bridge between ab initio calculations and standard process experimental data

    Materials Science in Semiconductor Processing, Vol. 3, Núm. 1-2, pp. 59-63

1996

  1. Avalanche breakdown of high-voltage p-n junctions of SiC

    Microelectronics Journal, Vol. 27, Núm. 1, pp. 43-51

  2. Dopant level freeze-out and nonideal effects in 6H-SiC epilayer junctions

    Journal of Applied Physics, Vol. 79, Núm. 1, pp. 310-315

1995

  1. Design of vertical power MOSFETs in SiC

    Proceedings of the International Conference on Microelectronics

  2. Low energy ion implantation simulation using a modified binary collision approximation code

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 228-231

1994

  1. On the forward conduction mechanisms in SiC P-N junctions

    Materials Research Society Symposium - Proceedings

  2. Saturation of generation-recombination current for very small recombination times

    Journal of Applied Physics, Vol. 76, Núm. 11, pp. 7384-7389

  3. The Poole-Frenkel Effect in 6H-SiC Diode Characteristics

    IEEE Transactions on Electron Devices, Vol. 41, Núm. 4, pp. 587-591