GERMAN DIAZ GONZALEZ-rekin lankidetzan egindako argitalpenak (8)

2015

  1. A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications

    Journal of Applied Physics, Vol. 118, Núm. 24

  2. Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications

    Applied Physics Letters, Vol. 106, Núm. 2

2013

  1. Experimental verification of intermediate band formation on titanium-implanted silicon

    Journal of Applied Physics, Vol. 113, Núm. 2

2012

  1. Electrical properties of intermediate band (IB) silicon solar cells obtained by titanium ion implantation

    AIP Conference Proceedings

2010

  1. Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

    Journal of Applied Physics, Vol. 107, Núm. 11

2009

  1. Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2008

  1. Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon

    Journal of Applied Physics, Vol. 104, Núm. 9

2007

  1. Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectrics

    Semiconductor Science and Technology, Vol. 22, Núm. 12, pp. 1344-1351