GERMAN
DIAZ GONZALEZ
Investigador en el període 1989-2007
LUIS ALBERTO
BAILON VEGA
Investigador en el període 1981-2016
Publicacions en què col·labora amb LUIS ALBERTO BAILON VEGA (8)
2015
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A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications
Journal of Applied Physics, Vol. 118, Núm. 24
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Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications
Applied Physics Letters, Vol. 106, Núm. 2
2013
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Experimental verification of intermediate band formation on titanium-implanted silicon
Journal of Applied Physics, Vol. 113, Núm. 2
2012
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Electrical properties of intermediate band (IB) silicon solar cells obtained by titanium ion implantation
AIP Conference Proceedings
2010
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Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks
Journal of Applied Physics, Vol. 107, Núm. 11
2009
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Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
2008
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Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon
Journal of Applied Physics, Vol. 104, Núm. 9
2007
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Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectrics
Semiconductor Science and Technology, Vol. 22, Núm. 12, pp. 1344-1351