Publicaciones en colaboración con investigadores/as de Universidad Complutense de Madrid (123)

2018

  1. Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals

    Journal of Electronic Materials

2017

  1. Vanadium supersaturated silicon system: a theoretical and experimental approach

    Journal of Physics D: Applied Physics, Vol. 50, Núm. 49

2015

  1. A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications

    Journal of Applied Physics, Vol. 118, Núm. 24

  2. Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications

    Applied Physics Letters, Vol. 106, Núm. 2

2013

  1. Experimental verification of intermediate band formation on titanium-implanted silicon

    Journal of Applied Physics, Vol. 113, Núm. 2

2012

  1. Electrical properties of intermediate band (IB) silicon solar cells obtained by titanium ion implantation

    AIP Conference Proceedings

2010

  1. Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

    Journal of Applied Physics, Vol. 107, Núm. 11

2009

  1. Continuous and localized Mn implantation of ZnO

    Nanoscale Research Letters, Vol. 4, Núm. 8, pp. 878-887

  2. Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2008

  1. Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon

    Journal of Applied Physics, Vol. 104, Núm. 9

  2. Physical properties of high pressure reactively sputtered hafnium oxide

    Vacuum, Vol. 82, Núm. 12, pp. 1391-1394

  3. Titanium doped silicon layers with very high concentration

    Journal of Applied Physics, Vol. 104, Núm. 1

2007

  1. Crystal damage assessment of Be+-implanted GaN by UV Raman scattering

    Semiconductor Science and Technology, Vol. 22, Núm. 2, pp. 70-73

  2. Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectrics

    Semiconductor Science and Technology, Vol. 22, Núm. 12, pp. 1344-1351

  3. Isotopic study of the nitrogen-related modes in N+ -implanted ZnO

    Applied Physics Letters, Vol. 90, Núm. 18

  4. Optical spectroscopic study of the SiN/HfO2 interfacial formation during rf sputtering of HfO2

    Applied Physics Letters, Vol. 91, Núm. 19

  5. Raman scattering characterization of implanted ZnO

    Materials Research Society Symposium Proceedings

2006

  1. Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis

    Thin Solid Films, Vol. 515, Núm. 2 SPEC. ISS., pp. 695-699

  2. Substrate influence on the high-temperature annealing behavior of GaN: Si vs. sapphire

    Materials Research Society Symposium Proceedings

  3. The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire

    Journal of Applied Physics, Vol. 100, Núm. 4