Publicaciones en colaboración con investigadores/as de Instituto de Ciencias de la Tierra Jaume Almera (22)

2007

  1. Crystal damage assessment of Be+-implanted GaN by UV Raman scattering

    Semiconductor Science and Technology, Vol. 22, Núm. 2, pp. 70-73

  2. Isotopic study of the nitrogen-related modes in N+ -implanted ZnO

    Applied Physics Letters, Vol. 90, Núm. 18

  3. Raman scattering characterization of implanted ZnO

    Materials Research Society Symposium Proceedings

2006

  1. Substrate influence on the high-temperature annealing behavior of GaN: Si vs. sapphire

    Materials Research Society Symposium Proceedings

  2. The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire

    Journal of Applied Physics, Vol. 100, Núm. 4

2003

  1. Evidence of phosphorus incorporation into InGaAs/InP epilayers after thermal annealing

    Journal of Applied Physics, Vol. 93, Núm. 11, pp. 9019-9023

  2. Study of the electrical activation of Si+-implanted InGaAs by means of Raman scattering

    Journal of Applied Physics, Vol. 93, Núm. 5, pp. 2659-2662

2002

  1. Micro-Raman study of surface alterations in InGaAs after thermal annealing treatments

    International Journal of Modern Physics B

  2. Raman scattering by an inhomogeneous plasma in implanted semiconductors

    Solid State Communications, Vol. 121, Núm. 11, pp. 609-613

2001

  1. Lattice recovery by rapid thermal annealing in Mg+-implanted InP assessed by Raman spectroscopy

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

2000

  1. Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors

    Journal of Applied Physics, Vol. 88, Núm. 11, pp. 6567-6570

  2. Generalization of the hydrodynamical model to analyze Raman scattering by free carriers: application to n-InP

    Journal of Luminescence, Vol. 87, pp. 595-597

  3. Lattice damage study of implanted InGaAs by means of Raman spectroscopy

    Journal of Luminescence, Vol. 87, pp. 721-723

1999

  1. Characterization of Mg+-implanted InP by Raman spectroscopy

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 148, Núm. 1-4, pp. 454-458

  2. Raman scattering by LO phonon-plasmon coupled modes in n-type InP

    Physical Review B - Condensed Matter and Materials Physics, Vol. 60, Núm. 8, pp. 5456-5463

1997

  1. Raman-scattering criteria for characterization of anneal-restored zinc blende single crystals: Application to Si+-implanted InP

    Journal of Applied Physics, Vol. 82, Núm. 8, pp. 3736-3739

  2. Study of Si+-implanted and annealed InP by means of Raman spectroscopy

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 132, Núm. 4, pp. 627-632

  3. Study of photoexcited carriers in semi-insulating InP by means of Raman spectroscopy

    Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

1996

  1. Raman-scattering assessment of Si+-implantation damage in InP

    Journal of Applied Physics, Vol. 79, Núm. 8, pp. 3927-3929

1995

  1. Characterization of Si implantation and annealing of InP by Raman spectroscopy

    Materials Research Society Symposium - Proceedings