Publicaciones en colaboración con investigadores/as de Instituto de Microelectrónica de Barcelona (38)

2024

  1. A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories

    Materials Science in Semiconductor Processing, Vol. 169

  2. Impact of the temperature on the conductive filament morphology in HfO2-based RRAM

    Materials Letters, Vol. 357

2023

  1. CONTROLLING DOPING PROFILES OF SILICON NANOWIRES FOR QUANTUM COMPUTING AND PHOTOVOLTAICS USING MICRO-RAMAN SPECTROSCOPY

    Acta Microscopica, Vol. 32, Núm. 2, pp. 8-9

  2. Effect of Temperature on the Multilevel Properties and Set and Reset Transitions in HfO2-Based Resistive Switching Devices

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  3. Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices

    Journal of Physics D: Applied Physics, Vol. 56, Núm. 36

  4. Technology Development for Exploring Novel Concepts in Semiconductor Qubits

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  5. Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  6. Variability and power enhancement of current controlled resistive switching devices

    Microelectronic Engineering, Vol. 276

2022

  1. An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices

    Chaos, Solitons and Fractals, Vol. 160

  2. Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 512, pp. 42-48

  3. Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks

    Electronics (Switzerland), Vol. 11, Núm. 3

  4. Microscopic origin of the acceptor removal in neutron-irradiated Si detectors - An atomistic simulation study

    Acta Materialia, Vol. 241

  5. Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge

    Solid-State Electronics, Vol. 194

  6. Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction

    Journal of Applied Physics, Vol. 132, Núm. 19

2021

  1. Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: Programming based on an external capacitor discharge

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

  2. Influences of the temperature on the electrical properties of HfO2-based resistive switching devices

    Electronics (Switzerland), Vol. 10, Núm. 22

  3. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

  4. Standards for the Characterization of Endurance in Resistive Switching Devices

    ACS Nano, Vol. 15, Núm. 11, pp. 17214-17231

  5. Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge

    Solid-State Electronics, Vol. 183

2020

  1. Single and complex devices on three topological configurations of HfO2 based RRAM

    LAEDC 2020 - Latin American Electron Devices Conference