Publicaciones en las que colabora con Giovanni Attolini (11)

2013

  1. Structural characterization of 3C-SiC grown using methyltrichlorosilane

    Materials Science Forum

2012

  1. AFM morphological characterization and Raman study of germanium grown on (111)GaAs

    Surface Science, Vol. 606, Núm. 9-10, pp. 808-812

2010

  1. Effect on ordering of the growth of GaInP layers on (111)-GaAs faces

    Journal of Electronic Materials, Vol. 39, Núm. 6, pp. 671-676

2009

  1. Growth and characterization of 3C-SiC films for Micro Electro Mechanical Systems (MEMS) applications

    Crystal Growth and Design, Vol. 9, Núm. 11, pp. 4852-4859

  2. Strain evaluation in SiC MEMS test structures

    ECS Transactions

2006

  1. Characterisation of GaAsN layers grown by MOVPE

    Journal of Crystal Growth

  2. The properties of GalnP/GaAs heterostructures as a function of growth temperature

    Journal De Physique. IV : JP

2004

  1. Influence of substrate growth temperature on the Cu-Pt type ordering in lattice-matched GaInP/GaAs heterostructures

    EPJ Applied Physics

2003

  1. Optical and morphological characteristics of LP MOVPE grown lattice matched GaInP/GaAs heterostructures

    Physica Status Solidi (A) Applied Research

2002

  1. Optical and structural characterization of LP MOVPE grown lattice matched InGaP/GaAs heterostructures

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Raman and photoluminescence mapping of lattice matched InGaP/GaAs heterostructures

    Materials Research Society Symposium - Proceedings, Vol. 692, pp. 91-96