Publicaciones en colaboración con investigadores/as de University of Rennes 1 (3)

2015

  1. Evidence of chlorine ion penetration in InP/InAsP quantum well structures during dry etching processes and effects of induced-defects on the electronic and structural behaviour

    Microelectronics Reliability, Vol. 55, Núm. 9-10, pp. 1750-1753

2014

  1. Composition profiles in InP/InAsP quantum well structures under the effect of reactives gases during dry etching processes - Luminescence and SIMS

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials

  2. Raman spectrum of Si nanowires: Temperature and phonon confinement effects

    Applied Physics A: Materials Science and Processing, Vol. 114, Núm. 4, pp. 1321-1331