Science of Materials and Metallurgic Engineering, Graphic Expression in Engineering, Mapping Engineering, Geodesy and Ph
Department
Instituto de Microelectrónica de Barcelona
Barcelona, EspañaPublications in collaboration with researchers from Instituto de Microelectrónica de Barcelona (3)
2013
-
2 MeV electron irradiation effects on the electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O 3, HfO2 and nanolaminated dielectrics
Solid-State Electronics, Vol. 79, pp. 65-74
2011
-
Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2 O3, HfO2, and nanolaminates on different silicon substrates
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
-
Negative-resistance effect in Al2O3 based and nanolaminated MIS structures
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011