MARÍA HELENA CASTAN LANASPA-rekin lankidetzan egindako argitalpenak (11)
2021
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Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications
Solid-State Electronics, Vol. 186
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Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices
Solid-State Electronics, Vol. 183
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Influences of the temperature on the electrical properties of HfO2-based resistive switching devices
Electronics (Switzerland), Vol. 10, Núm. 22
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Performance Assessment of Amorphous HfO2-Based RRAM Devices for Neuromorphic Applications
ECS Journal of Solid State Science and Technology, Vol. 10, Núm. 8
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Performance assessment of amorphous HfO2-based RRAM devices for neuromorphic applications
ECS Transactions
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Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
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Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge
Solid-State Electronics, Vol. 183
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Thermoelectrical characterization of piezoelectric diaphragms: Towards a better understanding of ferroelectrics for future memory applications
ECS Transactions
2018
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Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters
Journal of Applied Physics, Vol. 124, Núm. 15
2016
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Electrical properties and nanoresistive switching of Ni-HfO2-Si capacitors
ECS Transactions
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Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO2-Si capacitors
IEEE Transactions on Electron Devices, Vol. 63, Núm. 5, pp. 1877-1883