Óscar González Ossorio-rekin lankidetzan egindako argitalpenak (10)
2021
-
Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications
Solid-State Electronics, Vol. 186
-
Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices
Solid-State Electronics, Vol. 183
-
Influences of the temperature on the electrical properties of HfO2-based resistive switching devices
Electronics (Switzerland), Vol. 10, Núm. 22
-
Off-chip prefetching based on Hidden Markov Model for non-volatile memory architectures
PLoS ONE, Vol. 16, Núm. 9 September 2021
-
Performance Assessment of Amorphous HfO2-Based RRAM Devices for Neuromorphic Applications
ECS Journal of Solid State Science and Technology, Vol. 10, Núm. 8
-
Performance assessment of amorphous HfO2-based RRAM devices for neuromorphic applications
ECS Transactions
-
Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
-
Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge
Solid-State Electronics, Vol. 183
-
Thermoelectrical characterization of piezoelectric diaphragms: Towards a better understanding of ferroelectrics for future memory applications
ECS Transactions
2018
-
Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters
Journal of Applied Physics, Vol. 124, Núm. 15