Publicaciones en las que colabora con Yuri Erokhin (3)

1998

  1. Boron-enhanced-diffusion of boron from ultra-low-energy boron implantation

    SILICON MATERIALS SCIENCE AND TECHNOLOGY, VOLS 1 AND 2

1997

  1. Boron-Enhanced-Diffusion of boron: The limiting factor for ultra-shallow junctions

    Technical Digest - International Electron Devices Meeting, IEDM

  2. Reduction of transient diffusion from 1-5 keV Si+ ion implantation due to surface annihilation of interstitials

    Applied Physics Letters, Vol. 71, Núm. 21, pp. 3141-3143