Publicacions en col·laboració amb investigadors/es de Universidad de Granada (19)

2024

  1. A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories

    Materials Science in Semiconductor Processing, Vol. 169

  2. Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states

    Materials Science in Semiconductor Processing, Vol. 179

2023

  1. Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices

    Journal of Physics D: Applied Physics, Vol. 56, Núm. 36

  2. Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  3. Variability and power enhancement of current controlled resistive switching devices

    Microelectronic Engineering, Vol. 276

2022

  1. An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices

    Chaos, Solitons and Fractals, Vol. 160

  2. Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge

    Solid-State Electronics, Vol. 194

  3. Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction

    Journal of Applied Physics, Vol. 132, Núm. 19

2021

  1. Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: Programming based on an external capacitor discharge

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

  2. Standards for the Characterization of Endurance in Resistive Switching Devices

    ACS Nano, Vol. 15, Núm. 11, pp. 17214-17231

2019

  1. Mimicking Halimane Synthases: Monitoring a Cascade of Cyclizations and Rearrangements from Epoxypolyprenes

    Journal of Organic Chemistry, Vol. 84, Núm. 21, pp. 13764-13779

2017

  1. A physically based model for resistive memories including a detailed temperature and variability description

    Microelectronic Engineering, Vol. 178, pp. 26-29

  2. A physically based model to describe resistive switching in different RRAM technologies

    2017 Spanish Conference on Electron Devices, CDE 2017

2016

  1. Cover Picture: Ti-Mediated Efficient Reductive Dehalogenation of Carbon–Halogen Bonds (Asian J. Org. Chem. 8/2016)

    Asian Journal of Organic Chemistry

  2. Ti-Mediated Efficient Reductive Dehalogenation of Carbon–Halogen Bonds

    Asian Journal of Organic Chemistry, Vol. 5, Núm. 8, pp. 991-1001

2015

  1. Design, development and characterization of buccal bioadhesive films of Doxepin for treatment of odontalgia

    Drug Delivery, Vol. 22, Núm. 6, pp. 869-876

  2. Homocoupling versus reduction of radicals: An experimental and theoretical study of Ti(iii)-mediated deoxygenation of activated alcohols

    Organic and Biomolecular Chemistry, Vol. 13, Núm. 11, pp. 3462-3469

2014

  1. Obtaining fast dissolving disintegrating tablets with different doses of melatonin

    International Journal of Pharmaceutics, Vol. 467, Núm. 1-2, pp. 84-89

2013

  1. Structural diversity from the transannular cyclizations of natural germacrone and epoxy derivatives: A theoretical-experimental study

    Chemistry - A European Journal, Vol. 19, Núm. 21, pp. 6598-6612