Electricidad y Electrónica

2009

1. Atomistic modeling of junction formation: Tools for physics understanding and process optimization

   ECS Transactions

2. Atomistic process modeling based on kinetic Monte Carlo and molecular dynamics for optimization of advanced devices

   Technical Digest - International Electron Devices Meeting, IEDM

3. Atomistic simulations of the effect of implant parameters on Si damage

   Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

4. Carrier mobility degradation in highly B-doped junctions

   Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

5. Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

   Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

6. Electrical characterization of ZrO2-based MIS structures with highly doped Si substrates

   Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

7. Electrical characterization of high-k based MIS capacitors using flat-band voltage transients

   Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

8. FDTD Study of Surface Plasmons and Perfect Tunneling of Power in Parallel-Plate Waveguides

   2009 MEDITERRANEAN MICROWAVE SYMPOSIUM

9. FDTD study of surface plasmons and perfect tunneling of power in parallel-plate waveguides

   2009 Mediterrannean Microwave Symposium, MMS 2009

10. Influence of Si surface on damage generation and recombination

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

11. Modeling and analysis of a TCR-FC reactive power compensator using the harmonic domain

    CERMA 2009 - Electronics Robotics and Automotive Mechanics Conference

12. Study of atomic layer deposited zirconium oxide thin films by using mono-cyclopentadienyl based precursors

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09