Electricity and Electronics

2005

1. 2D-TLM model for propagation in biisotropic media

   35th European Microwave Conference 2005 - Conference Proceedings

2. A 2D-TLM model for electromagnetic wave propagation in chiral media

   Microwave and Optical Technology Letters, Vol. 46, Núm. 2, pp. 180-182

3. A comparative study of atomic layer deposited advanced high-k dielectrics

   2005 Spanish Conference on Electron Devices, Proceedings

4. A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition

   Semiconductor Science and Technology, Vol. 20, Núm. 10, pp. 1044-1051

5. A dual-mode, complex, ΔΣ ADC in CMOS for Wireless-LAN receivers

   Proceedings of SPIE - The International Society for Optical Engineering

6. A multiresolution model of transient microwave signals in dispersive chiral media

   2005 IEEE/ACES International Conference on Wireless Communications and Applied Computational Electromagnetics

7. A novel technique for the structural and energetic characterization of lattice defects in the molecular dynamics framework

   Computational Materials Science

8. Amorphous layer depth dependence on implant parameters during Si self-implantation

   Materials Science and Engineering B: Solid-State Materials for Advanced Technology

9. Atomistic analysis of annealing behavior of amorphous regions

   2005 Spanish Conference on Electron Devices, Proceedings

10. Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon

    Journal of Applied Physics, Vol. 97, Núm. 10

11. Atomistic modeling of dopant implantation and annealing in Si: Damage evolution, dopant diffusion and activation

    Computational Materials Science

12. Atomistic modeling of ion beam induced amorphization in silicon

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

13. Atomistic simulations in Si processing: Bridging the gap between atoms and experiments

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

14. Bimodal distribution of damage morphology generated by ion implantation

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

15. Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

16. Boron diffusion in amorphous silicon

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

17. Boron redistribution in pre-amorphized Si during thermal annealing

    2005 Spanish Conference on Electron Devices, Proceedings

18. Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates

    Thin Solid Films, Vol. 474, Núm. 1-2, pp. 222-229

19. Comprehensive modeling of ion-implant amorphization in silicon

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

20. Damage buildup model with dose rate and temperature dependence

    2005 Spanish Conference on Electron Devices, Proceedings