Publications dans lesquelles il/elle collabore avec BENJAMÍN SAHELICES FERNÁNDEZ (13)

2023

  1. Correction to: Systematic Review of Machine Learning Applied to the Prediction of Obesity and Overweight (Journal of Medical Systems, (2023), 47, 1, (8), 10.1007/s10916-022-01904-1)

    Journal of Medical Systems

  2. Prediction of the Sleep Apnea Severity Using 2D-Convolutional Neural Networks and Respiratory Effort Signals

    Diagnostics, Vol. 13, Núm. 20

  3. Systematic Review of Machine Learning applied to the Prediction of Obesity and Overweight

    Journal of Medical Systems, Vol. 47, Núm. 1

2021

  1. Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

    Solid-State Electronics, Vol. 186

  2. Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

    Solid-State Electronics, Vol. 183

  3. Influences of the temperature on the electrical properties of HfO2-based resistive switching devices

    Electronics (Switzerland), Vol. 10, Núm. 22

  4. Off-chip prefetching based on Hidden Markov Model for non-volatile memory architectures

    PLoS ONE, Vol. 16, Núm. 9 September 2021

  5. Performance Assessment of Amorphous HfO2-Based RRAM Devices for Neuromorphic Applications

    ECS Journal of Solid State Science and Technology, Vol. 10, Núm. 8

  6. Performance assessment of amorphous HfO2-based RRAM devices for neuromorphic applications

    ECS Transactions

  7. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

  8. Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge

    Solid-State Electronics, Vol. 183

  9. Thermoelectrical characterization of piezoelectric diaphragms: Towards a better understanding of ferroelectrics for future memory applications

    ECS Transactions

2018

  1. Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

    Journal of Applied Physics, Vol. 124, Núm. 15