ETS INGENIEROS TELECOMUNICACION
Center


Stanford University
Stanford, Estados UnidosPublications in collaboration with researchers from Stanford University (9)
2018
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Multimodal teaching analytics: Automated extraction of orchestration graphs from wearable sensor data
Journal of Computer Assisted Learning, Vol. 34, Núm. 2, pp. 193-203
2005
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Role of silicon interstitials in boron cluster dissolution
Applied Physics Letters, Vol. 86, Núm. 3, pp. 1-3
2004
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The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
2003
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Atomistic modeling of B activation and deactivation for ultra-shallow junction formation
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles
Applied Physics Letters, Vol. 83, Núm. 20, pp. 4166-4168
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Dopant redistribution effects in preamorphized silicon during low temperature annealing
Technical Digest - International Electron Devices Meeting
2002
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A physics based approach to ultra-shallow p+-junction formation at the 32 nm node
Technical Digest - International Electron Devices Meeting
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Timescale analysis for wavelength-routed optical burst-switched (WR-OBS) networks
Conference on Optical Fiber Communication, Technical Digest Series
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Timescale analysis for wavelength-routed optical burst-switched (WR-OBS) networks
Optics InfoBase Conference Papers