Articles (17) Publications in which a researcher has participated


  1. A tunable crystal diffraction telescope for the international space station

    European Space Agency, (Special Publication) ESA SP, pp. 433-437

  2. Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

    Applied Physics Letters, Vol. 68, Núm. 3, pp. 409-411

  3. Avalanche breakdown of high-voltage p-n junctions of SiC

    Microelectronics Journal, Vol. 27, Núm. 1, pp. 43-51

  4. Basic symptoms and cognitive dynamic disorders in schizophrenic patients

    Neurology Psychiatry and Brain Research, Vol. 4, Núm. 4, pp. 171-178

  5. Dinámica neuronal para modelar el proceso de segmentación de estímulos visuales de color y textura

    Informática y automática: revista de la Asociación Española de Informática y Automática, Vol. 29, Núm. 3, pp. 16-27

  6. Direct determination of relaxation parameters in deep-level transient spectroscopy experiments

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, Núm. 4 A, pp. 2196-2198

  7. Dopant level freeze-out and nonideal effects in 6H-SiC epilayer junctions

    Journal of Applied Physics, Vol. 79, Núm. 1, pp. 310-315

  8. Experimental results obtained with the positron-annihilation-radiation telescope of the Toulouse-Argonne collaboration

    Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 373, Núm. 1, pp. 159-164

  9. High-resolution x-ray diffraction study of piezoelectric InGaAs/GaAs multiquantum well p-i-n photodiodes grown on (111)B GaAs

    Applied Physics Letters, Vol. 69, Núm. 11, pp. 1574-1576

  10. Ion beam induced recrystallization of amorphous silicon: A molecular dynamics study

    Journal of Applied Physics, Vol. 80, Núm. 11, pp. 6160-6169

  11. Ion-beam processing of silicon at keV energies: A molecular-dynamics study

    Physical Review B - Condensed Matter and Materials Physics, Vol. 54, Núm. 23, pp. 16683-16695

  12. Maximum norm analysis of completely discrete finite element methods for parabolic problems

    SIAM Journal on Numerical Analysis, Vol. 33, Núm. 4, pp. 1654-1668

  13. Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 112, Núm. 1-4, pp. 156-159

  14. On the convolution operators arising in the study of abstract initial boundary value problems

    Royal Society of Edinburgh - Proceedings A, Vol. 126, Núm. 3, pp. 515-539

  15. Probing resonant tunneling and charge accumulation via capacitance measurements in [111]-oriented InGaAs/GaAs MQW and superlattices

    Solid-State Electronics, Vol. 40, Núm. 1-8, pp. 591-595

  16. Simulation of cluster evaporation and transient enhanced diffusion in silicon

    Applied Physics Letters, Vol. 68, Núm. 17, pp. 2395-2397

  17. Simulations of thin film deposition from atomic and cluster beams

    Materials Science and Engineering B, Vol. 37, Núm. 1-3, pp. 1-7