Centro
ETS INGENIEROS TELECOMUNICACION
Artículos (19) Publicaciones en las que ha participado algún/a investigador/a
1996
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A tunable crystal diffraction telescope for the international space station
European Space Agency, (Special Publication) ESA SP, pp. 433-437
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Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena
Applied Physics Letters, Vol. 68, Núm. 3, pp. 409-411
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Avalanche breakdown of high-voltage p-n junctions of SiC
Microelectronics Journal, Vol. 27, Núm. 1, pp. 43-51
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Basic symptoms and cognitive dynamic disorders in schizophrenic patients
Neurology Psychiatry and Brain Research, Vol. 4, Núm. 4, pp. 171-178
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Dinámica neuronal para modelar el proceso de segmentación de estímulos visuales de color y textura
Informática y automática: revista de la Asociación Española de Informática y Automática, Vol. 29, Núm. 3, pp. 16-27
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Direct determination of relaxation parameters in deep-level transient spectroscopy experiments
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, Núm. 4 A, pp. 2196-2198
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Dopant level freeze-out and nonideal effects in 6H-SiC epilayer junctions
Journal of Applied Physics, Vol. 79, Núm. 1, pp. 310-315
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Experimental results obtained with the positron-annihilation-radiation telescope of the Toulouse-Argonne collaboration
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 373, Núm. 1, pp. 159-164
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High-resolution x-ray diffraction study of piezoelectric InGaAs/GaAs multiquantum well p-i-n photodiodes grown on (111)B GaAs
Applied Physics Letters, Vol. 69, Núm. 11, pp. 1574-1576
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Ion beam induced recrystallization of amorphous silicon: A molecular dynamics study
Journal of Applied Physics, Vol. 80, Núm. 11, pp. 6160-6169
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Ion-beam processing of silicon at keV energies: A molecular-dynamics study
Physical Review B - Condensed Matter and Materials Physics, Vol. 54, Núm. 23, pp. 16683-16695
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Maximum norm analysis of completely discrete finite element methods for parabolic problems
SIAM Journal on Numerical Analysis, Vol. 33, Núm. 4, pp. 1654-1668
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Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 112, Núm. 1-4, pp. 156-159
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On the convolution operators arising in the study of abstract initial boundary value problems
Royal Society of Edinburgh - Proceedings A, Vol. 126, Núm. 3, pp. 515-539
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Probing resonant tunneling and charge accumulation via capacitance measurements in [111]-oriented InGaAs/GaAs MQW and superlattices
Solid-State Electronics, Vol. 40, Núm. 1-8, pp. 591-595
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Simulation of cluster evaporation and transient enhanced diffusion in silicon
Applied Physics Letters, Vol. 68, Núm. 17, pp. 2395-2397
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Simulations of thin film deposition from atomic and cluster beams
Materials Science and Engineering B, Vol. 37, Núm. 1-3, pp. 1-7
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The enthalpy change in protein folding and binding: Refinement of parameters for structure-based calculations
Proteins: Structure, Function and Genetics, Vol. 26, Núm. 2, pp. 123-133
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The magnitude of the backbone conformational entropy change in protein folding
Proteins: Structure, Function and Genetics, Vol. 25, Núm. 2, pp. 143-156