Dopant level freeze-out and nonideal effects in 6H-SiC epilayer junctions

  1. Quintanilla, L.
  2. Dueñas, S.
  3. Castán, E.
  4. Pinacho, R.
  5. Pelaz, L.
  6. Bailón, L.
  7. Barbolla, J.
Journal:
Journal of Applied Physics

ISSN: 0021-8979

Year of publication: 1996

Volume: 79

Issue: 1

Pages: 310-315

Type: Article

DOI: 10.1063/1.360831 GOOGLE SCHOLAR

Related Projects

DISPOSITIVOS DE UNION DE CSI PARA ALTA TEMPERATURA.

1993/00067/001

Data source: Scopus