Optical characterization of GaAs/Si layers grown by the conformal method (confined lateral epitaxial growth)

  1. Ardila, A.M.
  2. Martinez, O.
  3. Avella, M.
  4. Jiménez, J.
  5. Gil-Lafon, E.
  6. Gérard, B.
Aldizkaria:
Journal of Materials Research

ISSN: 0884-2914

Argitalpen urtea: 2002

Alea: 17

Zenbakia: 6

Orrialdeak: 1341-1349

Mota: Artikulua

DOI: 10.1557/JMR.2002.0200 GOOGLE SCHOLAR
Datuen iturria: Scopus