Atomistic modeling of dopant implantation and annealing in Si: Damage evolution, dopant diffusion and activation

  1. Pelaz, L.
  2. Marqués, L.A.
  3. Aboy, M.
  4. López, P.
  5. Barbolla, J.
Journal:
Computational Materials Science

ISSN: 0927-0256

Year of publication: 2005

Volume: 33

Issue: 1-3

Pages: 92-105

Type: Conference paper

DOI: 10.1016/J.COMMATSCI.2004.12.043 GOOGLE SCHOLAR
Data source: Scopus