Dopant dynamics and defects evolution in implanted silicon under laser irradiations: A coupled continuum and kinetic Monte Carlo approach

  1. Fisicaro, G.
  2. Pelaz, L.
  3. Aboy, M.
  4. Lopez, P.
  5. Italia, M.
  6. Huet, K.
  7. Cristiano, F.
  8. Essa, Z.
  9. Yang, Q.
  10. Bedel-Pereira, E.
  11. Hackenberg, M.
  12. Pichler, P.
  13. Quillec, M.
  14. Taleb, N.
  15. Magna, A.L.
Proceedings:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

ISBN: 9781467357364

Year of publication: 2013

Pages: 33-36

Type: Conference paper

DOI: 10.1109/SISPAD.2013.6650567 GOOGLE SCHOLAR
Data source: Scopus