Dopant dynamics and defects evolution in implanted silicon under laser irradiations: A coupled continuum and kinetic Monte Carlo approach

  1. Fisicaro, G.
  2. Pelaz, L.
  3. Aboy, M.
  4. Lopez, P.
  5. Italia, M.
  6. Huet, K.
  7. Cristiano, F.
  8. Essa, Z.
  9. Yang, Q.
  10. Bedel-Pereira, E.
  11. Hackenberg, M.
  12. Pichler, P.
  13. Quillec, M.
  14. Taleb, N.
  15. Magna, A.L.
Actas:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

ISBN: 9781467357364

Ano de publicación: 2013

Páxinas: 33-36

Tipo: Achega congreso

DOI: 10.1109/SISPAD.2013.6650567 GOOGLE SCHOLAR
Fonte de datos: Scopus