Dopant dynamics and defects evolution in implanted silicon under laser irradiations: A coupled continuum and kinetic Monte Carlo approach

  1. Fisicaro, G.
  2. Pelaz, L.
  3. Aboy, M.
  4. Lopez, P.
  5. Italia, M.
  6. Huet, K.
  7. Cristiano, F.
  8. Essa, Z.
  9. Yang, Q.
  10. Bedel-Pereira, E.
  11. Hackenberg, M.
  12. Pichler, P.
  13. Quillec, M.
  14. Taleb, N.
  15. Magna, A.L.
Actes de conférence:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

ISBN: 9781467357364

Année de publication: 2013

Pages: 33-36

Type: Communication dans un congrès

DOI: 10.1109/SISPAD.2013.6650567 GOOGLE SCHOLAR