Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices

  1. Dueñas, S.
  2. Castán, H.
  3. Ossorio, O.G.
  4. Domínguez, L.A.
  5. García, H.
  6. Kalam, K.
  7. Kukli, K.
  8. Ritala, M.
  9. Leskelä, M.
Proceedings:
2017 32nd Conference on Design of Circuits and Integrated Systems, DCIS 2017 - Proceedings

ISBN: 9781538651087

Year of publication: 2018

Volume: 2017-November

Pages: 1-4

Type: Conference paper

DOI: 10.1109/DCIS.2017.8311627 GOOGLE SCHOLAR
Data source: Scopus