Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices

  1. Dueñas, S.
  2. Castán, H.
  3. Ossorio, O.G.
  4. Domínguez, L.A.
  5. García, H.
  6. Kalam, K.
  7. Kukli, K.
  8. Ritala, M.
  9. Leskelä, M.
Actes de conférence:
2017 32nd Conference on Design of Circuits and Integrated Systems, DCIS 2017 - Proceedings

ISBN: 9781538651087

Année de publication: 2018

Volumen: 2017-November

Pages: 1-4

Type: Communication dans un congrès

DOI: 10.1109/DCIS.2017.8311627 GOOGLE SCHOLAR
La source de données: Scopus