Indium isoelectronic doping influence on etch pit density in gaas layers grown by vapour phase epitaxy

  1. Coronado, M.L.
  2. Abril, E.J.
  3. Aguilar, M.
Journal:
Japanese Journal of Applied Physics

ISSN: 1347-4065,  0021-4922

Year of publication: 1986

Volume: 25

Issue: 11 A

Pages: L899-L901

Type: Article

DOI: 10.1143/JJAP.25.L899 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus