Fully porous GaN p-n junctions fabricated by chemical vapor deposition: A green technology towards more efficient LEDs

1. Carvajal, J.J.
2. Mena, J.
3. Bilousov, O.V.
4. Martínez, O.
5. Jiménez, J.
6. Zubialevich, V.Z.
7. Parbrook, P.J.
8. Geaney, H.
9. O'Dwyer, C.
10. Díaz, F.
11. Aguiló, M.

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DOI: 10.1149/06601.0163ECST GOOGLE SCHOLAR lock_openUVADOC editor

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Fonte de datos: Scopus