Physical modeling of defects, dopant activation and diffusion in aggressively scaled bulk and SOI devices: Atomistic and continuum approaches

  1. Moroz, V.
  2. Martin-Bragado, I.
Proceedings:
Materials Research Society Symposium Proceedings

ISSN: 0272-9172

ISBN: 9781558998681

Year of publication: 2006

Volume: 912

Pages: 179-190

Type: Conference paper

DOI: 10.1557/PROC-0912-C05-05 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus