Physical modeling of defects, dopant activation and diffusion in aggressively scaled bulk and SOI devices: Atomistic and continuum approaches
- Moroz, V.
- Martin-Bragado, I.
ISSN: 0272-9172
ISBN: 9781558998681
Ano de publicación: 2006
Volume: 912
Páxinas: 179-190
Tipo: Achega congreso