Physical modeling of defects, dopant activation and diffusion in aggressively scaled bulk and SOI devices: Atomistic and continuum approaches

  1. Moroz, V.
  2. Martin-Bragado, I.
Aktak:
Materials Research Society Symposium Proceedings

ISSN: 0272-9172

ISBN: 9781558998681

Argitalpen urtea: 2006

Alea: 912

Orrialdeak: 179-190

Mota: Biltzar ekarpena

DOI: 10.1557/PROC-0912-C05-05 GOOGLE SCHOLAR

Objetivos de desarrollo sostenible

Datuen iturria: Scopus