Publicacions en què col·labora amb JUAN IGNACIO JIMENEZ LOPEZ (33)

2018

  1. Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach

    Journal of Applied Physics, Vol. 123, Núm. 11

2016

  1. Local electric field enhancement at the heterojunction of Si/SiGe axially heterostructured nanowires under laser illumination

    Nanotechnology, Vol. 27, Núm. 45

2014

  1. Raman spectrum of Si nanowires: Temperature and phonon confinement effects

    Applied Physics A: Materials Science and Processing, Vol. 114, Núm. 4, pp. 1321-1331

2013

  1. Interaction between a laser beam and semiconductor nanowires: Application to the Raman spectrum of Si nanowires

    International Journal of Nanoparticles

2012

  1. Analysis of the residuals in grave goods from the vaccaea era at the necropolis of "las ruedas" in pintia

    Spectroscopy Letters, Vol. 45, Núm. 2, pp. 141-145

  2. Quantitative determination of gaseous phase compositions in fluid inclusions by raman microspectrometry

    Spectroscopy Letters, Vol. 45, Núm. 2, pp. 156-160

  3. Raman spectroscopy analysis of a playing card from the 18th century

    Spectroscopy Letters, Vol. 45, Núm. 2, pp. 114-117

2011

  1. Si and SixGe1-x NWs studied by Raman spectroscopy

    Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 8, Núm. 4, pp. 1307-1310

2010

  1. Crystallization of amorphous Si 06Ge 04 nanoparticles embedded in SiO 2: Crystallinity versus compositional stability

    Journal of Electronic Materials, Vol. 39, Núm. 8, pp. 1194-1202

  2. Micro-Raman spectroscopy of Si nanowires: Influence of diameter and temperature

    Applied Physics Letters, Vol. 96, Núm. 1

  3. Raman spectroscopy analysis of ecclesiastical bulls inks and gilded copper enamels

    Physics Procedia

  4. Raman spectroscopy study of group IV semiconductor nanowires

    Physics Procedia

  5. SiGe nanowires grown by LPCVD: Morphological and structural analysis

    Materials Research Society Symposium Proceedings

2008

  1. Influence of the crystallization process on the luminescence of multilayers of SiGe nanocrystals embedded in SiO2

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 147, Núm. 2-3, pp. 200-204

  2. UV Raman spectroscopy of group IV nanocrystals embedded in a SiO 2 matrix

    Journal of Materials Science: Materials in Electronics

2007

  1. Comparative study of the luminescence of structures with Ge nanocrystals formed by dry and wet oxidation of SiGe films

    Nanotechnology, Vol. 18, Núm. 6

  2. Luminescence in multilayers of SiGe nanocrystals embedded in SiO 2

    Materials Research Society Symposium Proceedings

  3. Optimization of the luminescence emission in nanocrystalline SiGe/SiO 2 multilayers

    Physica Status Solidi (A) Applications and Materials Science

  4. Tailored deposition by LPCVD of non-stoichiometric Si oxides and their application in the formation of Si nanocrystals embedded in SiO2 by thermal annealing

    Materials Research Society Symposium Proceedings

2006

  1. Role of the SiO2 buffer layer thickness in the formation of Si/SiO2/nc-Ge/SiO2 structures by dry oxidation

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 249, Núm. 1-2 SPEC. ISS., pp. 306-309