University of Tartu-ko ikertzaileekin lankidetzan egindako argitalpenak (6)

2009

  1. Electrical characterization of high-k based MIS capacitors using flat-band voltage transients

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  2. Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, Núm. 1, pp. 389-393

  3. Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, Núm. 1, pp. 416-420

2008

  1. Comparative study of flatband voltage transients on high-k dielectric-based metal-insulator-semiconductor capacitors

    Journal of the Electrochemical Society, Vol. 155, Núm. 11

2007

  1. Electrical properties of atomic-layer-deposited thin gadolinium oxide high- k gate dielectrics

    Journal of the Electrochemical Society, Vol. 154, Núm. 10

  2. Study of atomic layer deposited gadolinium oxide thin films on silicon

    Materials Research Society Symposium Proceedings