Publicaciones en las que colabora con SALVADOR DUEÑAS CARAZO (7)

1999

  1. Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions

    Journal of Applied Physics, Vol. 86, Núm. 9, pp. 4855-4860

  2. Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions

    Journal of Applied Physics, Vol. 85, Núm. 11, pp. 7978-7980

1997

  1. Thermal emission processes of DX centres in AlxGa1-xAs:Si

    Solid-State Electronics, Vol. 41, Núm. 1, pp. 103-109

1995

  1. Ability of capacitance–voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors

    Materials Science and Technology (United Kingdom), Vol. 11, Núm. 10, pp. 1074-1078

1994

  1. Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique

    Semiconductor Science and Technology, Vol. 9, Núm. 9, pp. 1637-1648

1992

  1. Influence of refilling effects on deep-level transient spectroscopy measurements in Se-doped AlxGa1-xAs

    Journal of Applied Physics, Vol. 72, Núm. 2, pp. 525-530

1991

  1. Characterization of the DX centers in AlGaAs:Si by admittance spectroscopy

    Journal of Applied Physics, Vol. 69, Núm. 8, pp. 4300-4305