Publicaciones en colaboración con investigadores/as de AT and T Bell Laboratories (5)

2001

  1. Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

1997

  1. Molecular dynamics simulations of ion bombardment processes

    Materials Science and Technology, Vol. 13, Núm. 11, pp. 893-896

1996

  1. Ion beam induced recrystallization of amorphous silicon: A molecular dynamics study

    Journal of Applied Physics, Vol. 80, Núm. 11, pp. 6160-6169

  2. Ion-beam processing of silicon at keV energies: A molecular-dynamics study

    Physical Review B - Condensed Matter and Materials Physics, Vol. 54, Núm. 23, pp. 16683-16695

  3. Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 112, Núm. 1-4, pp. 156-159